V. Eu

Heavily doped <i>p</i>-GaAs grown by low-pressure organometallic vapor phase epitaxy using liquid CCl4

Ling Yang, P. D. Wright, V. Eu et al. · Journal of Applied Physics · 1992 · 74 citations

Semiconductors, Materials Science, Electrical Engineering +15

Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors

Minfu Feng, H. Kanber, V. Eu et al. · Applied Physics Letters · 1984 · 42 citations

Electrical Engineering, Single-stage Amplifier, Engineering +12

Does the two-dimensional electron gas effect contribute to high-frequency and high-speed performance of field-effect transistors?

M. Feng, C.L. Lau, V. Eu et al. · Applied Physics Letters · 1990 · 39 citations

Electrical Engineering, Engineering, Field-effect Transistors +12

Cr profiles in semi-insulating GaAs after annealing with and without SiO2 encapsulants in a H2-As4 atmosphere

V. Eu, M. Feng, W.B. Henderson et al. · Applied Physics Letters · 1980 · 30 citations

Engineering, Semiconductors, Ii-vi Semiconductor +16

Impurity induced layer disordering of Si implanted Al<i>x</i>Ga1−<i>x</i>As-GaAs quantum-well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops

L. J. Guido, K. C. Hsieh, N. Holonyak et al. · Journal of Applied Physics · 1987 · 28 citations

Engineering, Si Diffusion, Optoelectronic Devices +18