W.B. Henderson

A comparison of rapid thermal annealing and controlled atmosphere annealing of Si-implanted GaAs

H. Kanber, R. J. Cipolli, W.B. Henderson et al. · Journal of Applied Physics · 1985 · 48 citations

Materials Science, Semiconductors, Electrical Engineering +14

Cr profiles in semi-insulating GaAs after annealing with and without SiO2 encapsulants in a H2-As4 atmosphere

V. Eu, M. Feng, W.B. Henderson et al. · Applied Physics Letters · 1980 · 30 citations

Engineering, Semiconductors, Ii-vi Semiconductor +16

Rapid thermal annealing of Si implanted GaAs for power field-effect transistors

H. Kanber, W.B. Henderson, R. C. Rush et al. · Applied Physics Letters · 1985 · 19 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Calix[4]Arenes in the partial cone conformation as ionophores in silver ion‐selective electrodes

Katherine O’Connor, W.B. Henderson, Eva O'Neill et al. · Electroanalysis · 1997 · 18 citations

Chemical Engineering, Partial Cone Conformation, Engineering +15

Study of cr, si and mn distribution in semi-insulating gaas after annealing with and without SiO2 in an H2-AS4 atmosphere

M. Feng, V. Eu, H. Kanber et al. · Journal of Electronic Materials · 1981 · 16 citations

Ii-vi Semiconductor, Electrical Engineering, Epitaxial Growth +10