Journal of Applied Physics · 1992 · 74 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor SurfacesWide-bandgap SemiconductorsBand GapDoped SemiconductorsHall EffectHole TransportNondestructive TestingPhotoluminescencePhotoluminescence SpectroscopySemiconductor Characterization
A hole concentration greater than 1020 cm−3 in GaAs has been achieved using a liquid CCl4 source for carbon in a low-pressure organometallic vapor phase epitaxy system. The resistivity and hole mobility measured at 300 K for a heavily carbon-doped (1.2×1020 cm−3) Hall sample made from a thin (180 nm) epitaxial layer were 8.0×10−4 Ω cm and 65 cm2/V s, respectively. Carbon-doped samples with excellent surface morphology were achieved using a V/III ratio of 22, and growth pressure and temperature of 80 Torr and 600 °C, respectively. A novel photoluminescence technique, based on band-gap shrinkage of heavily doped p+-GaAs, has been shown to be useful for nondestructive measurement of the hole concentration in submicrometer layers.
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