Z.H. Lu

Highly efficient band-edge emission from InP quantum dots

O. I. Mićić, Julian Sprague, Z.H. Lu et al. · Applied Physics Letters · 1996 · 314 citations

Engineering, Materials Engineering, Materials Science +16

Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily doped <i>p</i>-type GaAs

M. C. Hanna, Z.H. Lu, A. Majerfeld · Applied Physics Letters · 1991 · 126 citations

Engineering, Electrical Engineering, Materials Science +16

Heavily doped <i>p</i>-GaAs grown by low-pressure organometallic vapor phase epitaxy using liquid CCl4

Ling Yang, P. D. Wright, V. Eu et al. · Journal of Applied Physics · 1992 · 74 citations

Engineering, Electrical Engineering, Materials Science +17

Determination of band gap narrowing and hole density for heavily C-doped GaAs by photoluminescence spectroscopy

Z.H. Lu, M. C. Hanna, A. Majerfeld · Applied Physics Letters · 1994 · 41 citations

Engineering, Materials Science, Physics +17

Determination of donor and acceptor densities in high-purity GaAs from photoluminescence analysis

Z.H. Lu, M. C. Hanna, D. M. Szmyd et al. · Applied Physics Letters · 1990 · 35 citations

Natural Sciences, Materials Science, Physics +17