Ling Yang

High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

Yue Hao, Ling Yang, Xiaohua Ma et al. · IEEE Electron Device Letters · 2011 · 152 citations

Semiconductor Technology, Electrical Engineering, Gan Hemts +9

Recent progress of integrated circuits and optoelectronic chips

Yue Hao, Shuiying Xiang, Genquan Han et al. · Science China Information Sciences · 2021 · 128 citations

Photonics, Electrical Engineering, Engineering +6

Heavily doped <i>p</i>-GaAs grown by low-pressure organometallic vapor phase epitaxy using liquid CCl4

Ling Yang, P. D. Wright, V. Eu et al. · Journal of Applied Physics · 1992 · 74 citations

Semiconductors, Materials Science, Electrical Engineering +15

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved <i>g</i> _<i>m</i> and Gain Linearity

Hao Lu, Bin Hou, Ling Yang et al. · IEEE Transactions on Electron Devices · 2021 · 59 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gain Linearity +12

High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology

Yang Lu, Xiaohua Ma, Ling Yang et al. · IEEE Electron Device Letters · 2018 · 58 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +10