Bin Hou

Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

Jiejie Zhu, Xiaohua Ma, Yong Xie et al. · IEEE Transactions on Electron Devices · 2014 · 85 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved <i>g</i> _<i>m</i> and Gain Linearity

Hao Lu, Bin Hou, Ling Yang et al. · IEEE Transactions on Electron Devices · 2021 · 59 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gain Linearity +12

High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology

Yang Lu, Xiaohua Ma, Ling Yang et al. · IEEE Electron Device Letters · 2018 · 58 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +10

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

Ling Yang, Bin Hou, Fuchun Jia et al. · IEEE Transactions on Electron Devices · 2022 · 50 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High Transport and Sub-Threshold Performance

Jiejie Zhu, Lixiang Chen, Jie Jiang et al. · IEEE Electron Device Letters · 2017 · 49 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15