Fuchun Jia

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

Ling Yang, Bin Hou, Fuchun Jia et al. · IEEE Transactions on Electron Devices · 2022 · 50 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application

Qian Yu, Chunzhou Shi, Ling Yang et al. · IEEE Electron Device Letters · 2023 · 39 citations

Wide-bandgap Semiconductor, Linearity Algan/gan/-graded-algan, Electrical Engineering +13

High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications

Chunzhou Shi, Ling Yang, Meng Zhang et al. · IEEE Transactions on Electron Devices · 2023 · 34 citations

The Influence of Fe Doping Tail in Unintentionally Doped GaN Layer on DC and RF Performance of AlGaN/GaN HEMTs

Fuchun Jia, Xiaohua Ma, Ling Yang et al. · IEEE Transactions on Electron Devices · 2021 · 33 citations

Wide-bandgap Semiconductor, Electrical Engineering, Uid Gan Layer +11

High V_TH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer

Mao Jia, Bin Hou, Ling Yang et al. · IEEE Electron Device Letters · 2023 · 32 citations

Semiconductor Technology, Improved Gate Reliability, Electrical Engineering +10