Inductor‐Free Wireless Energy Delivery via Maxwell's Displacement Current from an Electrodeless Triboelectric Nanogenerator

Xia Cao, Meng Zhang, Jinrong Huang, +4

Advanced Materials

Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics

Wei Guo, Meng Zhang, P. Bhattacharya, +1

Nano Letters

A InGaN/GaN quantum dot green (λ=524 nm) laser

Meng Zhang, Animesh Banerjee, Chi-Sen Lee, +2

Applied Physics Letters

Wide-bandgap SemiconductorQuantum PhotonicsEngineeringLaser ApplicationsLaser Material +17

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved <i>g</i> _<i>m</i> and Gain Linearity

Hao Lu, Bin Hou, Ling Yang, +9

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorElectrical EngineeringGain LinearityEngineeringPhysics +10

High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology

Yang Lu, Xiaohua Ma, Ling Yang, +6

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceGan HemtEngineering +8

Demonstration of Nonlinear-Energy-Spread Compensation in Relativistic Electron Bunches with Corrugated Structures

Feichao Fu, Rui Wang, Pengfei Zhu, +18

Physical Review Letters

Relativistic Electron BunchesEngineeringRelativistic PlasmaElectron DiffractionAccelerator Physic +17

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

Ling Yang, Bin Hou, Fuchun Jia, +10

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorElectrical EngineeringEngineeringCo-doping Buffer HemtRf Semiconductor +9

Experimental Demonstration of Longitudinal Beam Phase-Space Linearizer in a Free-Electron Laser Facility by Corrugated Structures

Haixiao Deng, Meng Zhang, Chao Feng, +19

Physical Review Letters

High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination

Hao Lu, Bin Hou, Ling Yang, +7

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringPeak PaeEngineeringRf Semiconductor +7

A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High- Linearity Applications

Sheng Wu, Yue Hao, Xiaohua Ma, +7

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics +9