Qian Yu

High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application

Qian Yu, Chunzhou Shi, Ling Yang et al. · IEEE Electron Device Letters · 2023 · 39 citations

Wide-bandgap Semiconductor, Linearity Algan/gan/-graded-algan, Electrical Engineering +13

High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications

Chunzhou Shi, Ling Yang, Meng Zhang et al. · IEEE Transactions on Electron Devices · 2023 · 34 citations

First Demonstration of State-of-the-art GaN HEMTs for Power and RF Applications on A Unified Platform with Free-standing GaN Substrate and Fe/C Co-doped Buffer

Mei Wu, Meng Zhang, Ling Yang et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 22 citations

Record Power Performance of 33.1 W/mm with 62.9% PAE at X-band and 14.4 W/mm at Ka-band from AlGaN/GaN/AlN:Fe Heterostucture

Ling Yang, Fuchun Jia, Hao Lu et al. · 2023 · 19 citations

High Power Linearity and Low Leakage Current of AlN/GaN/InGaN Coupling Channel HEMTs With N₂O Oxidation Treatment

Hao Lu, Longge Deng, Ling Yang et al. · IEEE Electron Device Letters · 2024 · 10 citations