Mei Wu

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved <i>g</i> _<i>m</i> and Gain Linearity

Hao Lu, Bin Hou, Ling Yang et al. · IEEE Transactions on Electron Devices · 2021 · 62 citations

Engineering, Electrical Engineering, Materials Science +17

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

Ling Yang, Bin Hou, Fuchun Jia et al. · IEEE Transactions on Electron Devices · 2022 · 56 citations

Engineering, Electrical Engineering, Materials Science +17

High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination

Hao Lu, Bin Hou, Ling Yang et al. · IEEE Electron Device Letters · 2021 · 51 citations

Engineering, Electrical Engineering, Materials Science +17

A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High- Linearity Applications

Sheng Wu, Yue Hao, Xiaohua Ma et al. · IEEE Electron Device Letters · 2019 · 45 citations

Engineering, Electrical Engineering, Materials Science +17

High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application

Qian Yu, Chunzhou Shi, Ling Yang et al. · IEEE Electron Device Letters · 2023 · 45 citations

Engineering, Electrical Engineering, Materials Science +17