A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High- Linearity Applications

Sheng Wu, Yue Hao, Xiaohua Ma, +7

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics +9

Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs

Meng Zhang, Xiaohua Ma, Ling Yang, +11

IEEE Transactions on Electron Devices

Device ModelingWide-bandgap SemiconductorElectrical EngineeringEngineeringQualitative Analysis +10

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Yuwei Zhou, Jiejie Zhu, Minhan Mi, +10

IEEE Journal of the Electron Devices Society

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorElectronic Engineering +9

Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

Pengfei Wang, Xiaohua Ma, Minhan Mi, +8

IEEE Transactions on Electron Devices

Device ModelingTransconductance PlateauElectrical EngineeringWide-bandgap SemiconductorEngineering +11

90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application

Minhan Mi, Xiaohua Ma, Ling Yang, +6

Applied Physics Letters

Wide-bandgap SemiconductorElectrical EngineeringHigh-frequency Enhancement-modeEngineeringApplied Physics +7

A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor <i>In Situ</i> SiN

Sheng Wu, Minhan Mi, Meng Zhang, +4

IEEE Transactions on Electron Devices

Materials EngineeringSemiconductorsElectrical EngineeringRf ApplicationsEngineering +13

Microstructure and Wear Characteristics of Hypoeutectic, Eutectic and Hypereutectic (Cr,Fe)&lt;SUB&gt;23&lt;/SUB&gt;C&lt;SUB&gt;6&lt;/SUB&gt; Carbides in Hardfacing Alloys

Che Wei Kuo, Chieh Fan, Sheng Wu, +1

MATERIALS TRANSACTIONS

EngineeringMechanical EngineeringMechanics Of MaterialsHardfacing AlloysCorrosion +15

Single step electron-beam lithography archiving lift-off for T-gate in high electron mobility transistor fabrication

Baoquan Sun, Peng Zhang, Teng Zhang, +3

Microelectronic Engineering

Electrical EngineeringEngineeringElectron-beam LithographyBeam LithographyNanoelectronics +4

Improving the transconductance flatness of InAlN/GaN HEMT by modulating V_T along the gate width

Minhan Mi, Sheng Wu, Meng Zhang, +7

Applied Physics Express

Low-power ElectronicsWide-bandgap SemiconductorElectrical EngineeringModulated Vt HemtEngineering +11

Record combination <i>f</i>max · <i>V</i>br of 25 THz·V in AlGaN/GaN HEMT with plasma treatment

Minhan Mi, Xiaohua Ma, Ling Yang, +6

AIP Advances

Wide-bandgap SemiconductorElectrical EngineeringEngineeringBreakdown VoltageApplied Physics +8