Sheng Wu

A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High- Linearity Applications

Sheng Wu, Yue Hao, Xiaohua Ma et al. · IEEE Electron Device Letters · 2019 · 44 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs

Meng Zhang, Xiaohua Ma, Ling Yang et al. · IEEE Transactions on Electron Devices · 2018 · 42 citations

Device Modeling, Wide-bandgap Semiconductor, Electrical Engineering +12

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Yuwei Zhou, Jiejie Zhu, Minhan Mi et al. · IEEE Journal of the Electron Devices Society · 2021 · 42 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

Pengfei Wang, Xiaohua Ma, Minhan Mi et al. · IEEE Transactions on Electron Devices · 2021 · 37 citations

Device Modeling, Transconductance Plateau, Electrical Engineering +13

90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application

Minhan Mi, Xiaohua Ma, Ling Yang et al. · Applied Physics Letters · 2017 · 31 citations

Wide-bandgap Semiconductor, Electrical Engineering, High-frequency Enhancement-mode +9