Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Yuwei Zhou, Jiejie Zhu, Minhan Mi, +10

IEEE Journal of the Electron Devices Society

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorElectronic Engineering +9

Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

Pengfei Wang, Xiaohua Ma, Minhan Mi, +8

IEEE Transactions on Electron Devices

Device ModelingTransconductance PlateauElectrical EngineeringWide-bandgap SemiconductorEngineering +11

High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

Yuwei Zhou, Minhan Mi, Mei Yang, +10

Applied Physics Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorContact Ledge Structure +9

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si₃N₄ Bilayer Passivation

Jielong Liu, Minhan Mi, Jiejie Zhu, +14

IEEE Transactions on Electron Devices

Materials EngineeringSemiconductorsElectrical EngineeringElectronic DevicesEngineering +11

High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications

Yuwei Zhou, Minhan Mi, Yutong Han, +9

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorElectrical EngineeringOxidation ProcessEngineeringRf Dispersion +11

Schottky diode rectifier for power harvesting application

Yuwei Zhou, Bruno Froppier, Tchanguiz Razban

Electrical EngineeringEnergy HarvestingDiode ModelizationEngineeringPower Device +10

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V <i>fmax·VBK</i> in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

Pengfei Wang, Minhan Mi, Meng Zhang, +10

Applied Physics Letters

Wide-bandgap SemiconductorThz PhotonicsElectrical EngineeringEngineeringNanoelectronics +10

Study of a matching circuit effect on a microwave rectifier

Yuwei Zhou, Bruno Froppier, Tchanguiz Razban

Electrical EngineeringEngineeringMatching Circuit EffectRectifier CircuitHigh-frequency Device +10

High-Performance AlGaN/GaN HEMTs With Hybrid Schottky–Ohmic Drain for <i>Ka</i>-Band Applications

Jielong Liu, Minhan Mi, Jiejie Zhu, +10

IEEE Transactions on Electron Devices

High-Efficiency Millimeter-Wave Enhancement-Mode Ultrathin-Barrier AlGaN/GaN Fin-HEMT for Low-Voltage Terminal Applications

Yuwei Zhou, Minhan Mi, Can Gong, +9

IEEE Transactions on Electron Devices