Minhan Mi

High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

Yuwei Zhou, Minhan Mi, Mei Yang et al. · Applied Physics Letters · 2022 · 31 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V <i>fmax·VBK</i> in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

Pengfei Wang, Minhan Mi, Meng Zhang et al. · Applied Physics Letters · 2022 · 15 citations

Wide-bandgap Semiconductor, Thz Photonics, Electrical Engineering +12

Improving the transconductance flatness of InAlN/GaN HEMT by modulating V_T along the gate width

Minhan Mi, Sheng Wu, Meng Zhang et al. · Applied Physics Express · 2019 · 14 citations

Low-power Electronics, Wide-bandgap Semiconductor, Electrical Engineering +13

Study on the effect of diamond layer on the performance of double-channel AlGaN/GaN HEMTs

Tian Zhu, Xuefeng Zheng, Yanrong Cao et al. · Semiconductor Science and Technology · 2020 · 14 citations

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Jielong Liu, Jiejie Zhu, Minhan Mi et al. · Applied Physics Letters · 2022 · 13 citations

Wide-bandgap Semiconductor, Si-rich Sin Layer, Electrical Engineering +11