Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs

Abstract

In this paper, AlGaN/GaN Fin-HEMTs with different fin configurations are theoretically and experimentally investigated. A simple physical-based threshold voltage model for AlGaN/GaN Fin-HEMTs is built for qualitative analysis. It is shown that the threshold voltage of AlGaN/GaN Fin-HEMTs depends on the width and height of the fin structure. The peak value and linearity of transconductance and current gain cutoff frequency are improved by reducing the fin length. It is also found that the linearity of transconductance is sensitive to the fin height, which can be attributed to the capacitance control from sidewalls.