Qing Zhu

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved <i>g</i> _<i>m</i> and Gain Linearity

Hao Lu, Bin Hou, Ling Yang et al. · IEEE Transactions on Electron Devices · 2021 · 62 citations

Engineering, Electrical Engineering, Materials Science +17

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

Ling Yang, Bin Hou, Fuchun Jia et al. · IEEE Transactions on Electron Devices · 2022 · 56 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs

Meng Zhang, Xiaohua Ma, Ling Yang et al. · IEEE Transactions on Electron Devices · 2018 · 46 citations

Engineering, Electrical Engineering, Electronic Materials +16

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Yuwei Zhou, Jiejie Zhu, Minhan Mi et al. · IEEE Journal of the Electron Devices Society · 2021 · 46 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region

Minhan Mi, Xiaohua Ma, Ling Yang et al. · IEEE Transactions on Electron Devices · 2017 · 43 citations

Engineering, Electrical Engineering, Physics +17