Hengshuang Zhang

High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology

Yang Lu, Xiaohua Ma, Ling Yang et al. · IEEE Electron Device Letters · 2018 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs

Meng Zhang, Xiaohua Ma, Ling Yang et al. · IEEE Transactions on Electron Devices · 2018 · 46 citations

Engineering, Electrical Engineering, Electronic Materials +16

A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High- Linearity Applications

Sheng Wu, Yue Hao, Xiaohua Ma et al. · IEEE Electron Device Letters · 2019 · 45 citations

Engineering, Electrical Engineering, Materials Science +17

Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region

Minhan Mi, Xiaohua Ma, Ling Yang et al. · IEEE Transactions on Electron Devices · 2017 · 43 citations

Engineering, Electrical Engineering, Physics +17

Enhanced g_mand f_TWith High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge

Ling Yang, Minhan Mi, Bin Hou et al. · IEEE Electron Device Letters · 2017 · 32 citations

Engineering, Electrical Engineering, Materials Science +17