Yunlong He

Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs

Meng Zhang, Xiaohua Ma, Ling Yang et al. · IEEE Transactions on Electron Devices · 2018 · 42 citations

Device Modeling, Wide-bandgap Semiconductor, Electrical Engineering +12

Enhanced g_mand f_TWith High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge

Ling Yang, Minhan Mi, Bin Hou et al. · IEEE Electron Device Letters · 2017 · 31 citations

Materials Engineering, High Johnson ’, Electrical Engineering +12

90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application

Minhan Mi, Xiaohua Ma, Ling Yang et al. · Applied Physics Letters · 2017 · 31 citations

Wide-bandgap Semiconductor, Electrical Engineering, High-frequency Enhancement-mode +9

Enhancement-Mode AlGaN/GaN Nanowire Channel High Electron Mobility Transistor With Fluorine Plasma Treatment by ICP

Yunlong He, Minhan Mi, Chong Wang et al. · IEEE Electron Device Letters · 2017 · 28 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +12

Improved on-state performance of AlGaN/GaN Fin-HEMTs by reducing the length of the nanochannel

Meng Zhang, Xiaohua Ma, Minhan Mi et al. · Applied Physics Letters · 2017 · 20 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +12