Chunzhou Shi

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

Ling Yang, Bin Hou, Fuchun Jia et al. · IEEE Transactions on Electron Devices · 2022 · 50 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application

Qian Yu, Chunzhou Shi, Ling Yang et al. · IEEE Electron Device Letters · 2023 · 39 citations

Wide-bandgap Semiconductor, Linearity Algan/gan/-graded-algan, Electrical Engineering +13

High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications

Chunzhou Shi, Ling Yang, Meng Zhang et al. · IEEE Transactions on Electron Devices · 2023 · 34 citations

First Demonstration of State-of-the-art GaN HEMTs for Power and RF Applications on A Unified Platform with Free-standing GaN Substrate and Fe/C Co-doped Buffer

Mei Wu, Meng Zhang, Ling Yang et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 22 citations

3 kV fully vertical <i>β</i>-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN

Qingyuan Chang, Bin Hou, Ling Yang et al. · Applied Physics Letters · 2025 · 10 citations