Qingyuan Chang

High V_TH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer

Mao Jia, Bin Hou, Ling Yang et al. · IEEE Electron Device Letters · 2023 · 40 citations

Engineering, Electrical Engineering, Materials Science +17

Improved p-GaN/AlGaN/GaN HEMTs with magnetronsputtered AlN cap layer

Mao Jia, Bin Hou, Ling Yang et al. · Applied Surface Science · 2024 · 22 citations

Engineering, Electrical Engineering, Materials Science +13

Record Power Performance of 33.1 W/mm with 62.9% PAE at X-band and 14.4 W/mm at Ka-band from AlGaN/GaN/AlN:Fe Heterostucture

Ling Yang, Fuchun Jia, Hao Lu et al. · 2023 · 20 citations

Engineering, Electrical Engineering, Materials Science +16

3 kV fully vertical <i>β</i>-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN

Qingyuan Chang, Bin Hou, Ling Yang et al. · Applied Physics Letters · 2025 · 15 citations

Engineering, Electrical Engineering, Materials Science +17

The electrical characteristic and trapping effect of AlGaN/GaN HEMTs with Fe and Fe/C co-doped GaN buffer layer

Xuan Su, Ling Yang, Meng Zhang et al. · Applied Physics Letters · 2024 · 10 citations

Engineering, Electrical Engineering, Materials Science +17