Lixiang Chen

Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High Transport and Sub-Threshold Performance

Jiejie Zhu, Lixiang Chen, Jie Jiang et al. · IEEE Electron Device Letters · 2017 · 49 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Enhanced g_mand f_TWith High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge

Ling Yang, Minhan Mi, Bin Hou et al. · IEEE Electron Device Letters · 2017 · 31 citations

Materials Engineering, High Johnson ’, Electrical Engineering +12

Colloidal tubular microrobots for cargo transport and compression

Xiaoyu Wang, Brennan Sprinkle, Hari Krishna Bisoyi et al. · Proceedings of the National Academy of Sciences · 2023 · 27 citations · Full text

Nanorobotics, Engineering, Soft Robotics +14

High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si <inline-formula> <tex-math notation="LaTeX">$\delta$ </tex-math> </inline-formula>-Doped AlGaN/GaN:C HEMTs

Ling Yang, Meng Zhang, Bin Hou et al. · IEEE Transactions on Electron Devices · 2019 · 26 citations

Wide-bandgap Semiconductor, Electrical Engineering, High Channel Conductivity +12

Hetero-integration of quasi two-dimensional PbZr0.2Ti0.8O3 on AlGaN/GaN HEMT and non-volatile modulation of two-dimensional electron gas

Lixiang Chen, He Wang, Bin Hou et al. · Applied Physics Letters · 2019 · 26 citations

Wide-bandgap Semiconductor, Engineering, Electronic Devices +19