Use of carbon-free Ta2O5 thin-films as a gate insulator

A reliable approach to charge-pumping measurements in MOS transistors

G. Groeseneken, H.E. Maes, N. Beltran et al. · IEEE Transactions on Electron Devices · 1984 · 1.4K citations

Engineering, Electrical Engineering, Materials Science +17

Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors

P. J. McWhorter, P.S. Winokur · Applied Physics Letters · 1986 · 774 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source

R. A. B. Devine, L. Vallier, Jean‐Luc Autran et al. · Applied Physics Letters · 1996 · 65 citations

Natural Sciences, Materials Engineering, Materials Science +17

Thin Ta2O5 films prepared by low pressure metal organic CVD

N. Rausch, Edmund P. Burte · Microelectronics Journal · 1993 · 37 citations

Natural Sciences, Materials Engineering, Materials Science +17

Characterization of Si–SiO2 interface states: Comparison between different charge pumping and capacitance techniques

Jean‐Luc Autran, Frédéric Seigneur, C. Plossu et al. · Journal of Applied Physics · 1993 · 29 citations

Engineering, Materials Engineering, Materials Science +17