Status of 1200V 4H-SiC Power DMOSFETs

Abstract

The commercial production of 1200 V 4H-SiC power MOSFETs is quickly becoming feasible in light of advances made in 4H-SiC substrate quality, improvements made in epitaxy, investigations of optimum device deign, advances made in increasing channel mobility with nitridation annealing, and optimization of device fabrication processes. These devices promise to enhance the efficiency of power handling circuits that currently rely on Si-based IGBTs. We routinely fabricate 1200 V power DMOSFETs with specific on-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on(sp)</sub> ) of 10 mOmega-cm² that show sub-microamps of leakage current at 1200 V with breakdown at greater than 1500 V. 1200V 4H-SiC DMOSFETs with active areas of 0.10 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> or 0.168 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> have been demonstrated for nominal current ratings of 10 A and 20 A, respectively.