Charles Scozzie

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

John W. Palmour, Lin Cheng, Vipindas Pala et al. · 2014 · 293 citations

Engineering, Electrical Engineering, Materials Science +17

10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

Vipindas Pala, Edward Van Brunt, Lin Cheng et al. · 2014 · 153 citations

Engineering, Electrical Engineering, Materials Science +17

27 kV, 20 A 4H-SiC n-IGBTs

Edward Van Brunt, Lin Cheng, Michael O’Loughlin et al. · Materials science forum · 2015 · 142 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

1000-V, 30-A 4H-SiC BJTs with high current gain

Sumi Krishnaswami, Anant Agarwal, Sei‐Hyung Ryu et al. · IEEE Electron Device Letters · 2005 · 84 citations

Engineering, Electrical Engineering, Materials Science +15

Physics-based numerical modeling and characterization of <i>6H</i>-silicon-carbide metal–oxide–semiconductor field-effect transistors

Stephen K. Powell, Neil Goldsman, J.M. McGarrity et al. · Journal of Applied Physics · 2002 · 82 citations

Engineering, Electrical Engineering, Materials Science +17