Non-melt laser annealing of Plasma Implanted Boron for ultra shallow junctions in Silicon

Heat of crystallization and melting point of amorphous silicon

E. P. Donovan, F. Spaepen, David Turnbull et al. · Applied Physics Letters · 1983 · 328 citations

Natural Sciences, Materials Engineering, Materials Science +17

Boron uphill diffusion during ultrashallow junction formation

Ray Duffy, V. C. Venezia, A. Heringa et al. · Applied Physics Letters · 2003 · 71 citations

Engineering, Materials Engineering, Materials Science +17

Boron-enhanced diffusion of boron from ultralow-energy ion implantation

Aditya Agarwal, H.‐J. Gossmann, D. J. Eaglesham et al. · Applied Physics Letters · 1999 · 70 citations

Engineering, Materials Engineering, Materials Science +15

Laser thermal processing for ultra shallow junction formation: numerical simulation and comparison with experiments

Miguel Hernández, J. Venturini, D. Zahorski et al. · Applied Surface Science · 2003 · 41 citations

Engineering, Electrical Engineering, Materials Science +16

Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

J. A. Sharp, N. E. B. Cowern, R.P. Webb et al. · Applied Physics Letters · 2006 · 37 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +12