J. A. Sharp

Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

J. A. Sharp, N. E. B. Cowern, R.P. Webb et al. · Applied Physics Letters · 2006 · 37 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +12

Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

J. J. Hamilton, E. J. H. Collart, B. Colombeau et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2005 · 23 citations

Engineering, Materials Engineering, Materials Science +11

Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕SiO2 interface

J. J. Hamilton, N. E. B. Cowern, J. A. Sharp et al. · Applied Physics Letters · 2006 · 20 citations · Full text

Engineering, Materials Engineering, Materials Science +15