Concepedia

Ultra-shallow Junction Engineering

Ultra-Shallow Junction Engineering is a semiconductor fabrication methodology that specifically enables the precise formation of highly confined, nanoscale doped regions in silicon substrates with minimal diffusion, distinguishing itself by addressing the critical challenge of junction depth scaling in advanced complementary metal–oxide–semiconductor (CMOS) technologies.

144

Publications

3.7K

Citations

745

Authors

161

Institutions

Publications per year

2017–2026

2

Parents

Publications

144

A 40 nm gate length n-MOSFET

Mizuki Ono, M. Saito, T. Yoshitomi et al. · IEEE Transactions on Electron Devices · 1995 · 114 citations

, , +17

Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions

Mizuki Ono, M. Saito, T. Yoshitomi et al. · 2002 · 105 citations

, , +17

Monolayer Doping via Phosphonic Acid Grafting on Silicon: Microscopic Insight from Infrared Spectroscopy and Density Functional Theory Calculations

Roberto C. Longo, Kyeongjae Cho, W. G. Schmidt et al. · Advanced Functional Materials · 2013 · 98 citations

, , +17

High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and Ni salicide

S. Inaba, K. Okano, Shôichi Matsuda et al. · IEEE Transactions on Electron Devices · 2002 · 75 citations

, , +16

Formation of silicided, ultra-shallow junctions using low thermal budget processing

C. M. Osburn · Journal of Electronic Materials · 1990 · 73 citations

, , +12

1–5 of 144

Authors

745

  1. CL
    C. Laviron

    CEA Grenoble, France

    7 publications · 174 citations

    7

    h-index

  2. TS
    T. Sarnet

    Centre National de la Recherche Scientifique, France

    6 publications · 143 citations

    6

    h-index

  3. MH
    Miguel Hernández

    Commissariat à l'Énergie Atomique et aux Énergies Alternatives, France

    6 publications · 143 citations

    6

    h-index

  4. GK
    G. Kerrien

    Université Paris-Sud, France

    6 publications · 158 citations

    6

    h-index

  5. JB
    J. Boulmer

    Université Paris-Sud, France

    6 publications · 158 citations

    6

    h-index

1–5 of 745

Institutions

161

  1. Centre National de la Recherche Scientifique

    Paris, France

    10 h-index

    39 publications

    1.2K citations

  2. Toshiba (Japan)

    Tokyo, Japan

    9 h-index

    93 publications

    4K citations

  3. Hitachi (Japan)

    Tokyo, Japan

    8 h-index

    35 publications

    701 citations

  4. University of California, Berkeley

    Berkeley, United States

    7 h-index

    20 publications

    491 citations

  5. Sopra (France)

    Paris, France

    7 h-index

    16 publications

    372 citations

  6. Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Paris, France

    7 h-index

    17 publications

    432 citations

  7. IMEC

    Leuven, Belgium

    7 h-index

    36 publications

    987 citations

  8. CEA Grenoble

    Grenoble, France

    7 h-index

    17 publications

    432 citations

1–8 of 161

Venues

  1. IEEE Transactions on Electron Devices

    11 publications · 454 citations

    11

    h-index

  2. Materials Science and Engineering B

    13 publications · 294 citations

    10

    h-index

  3. 9

    h-index

  4. Applied Physics Letters

    7 publications · 217 citations

    7

    h-index

  5. Journal of Electronic Materials

    JEM · 7 publications · 201 citations

    7

    h-index

1–5