Laser thermal processing for ultra shallow junction formation: numerical simulation and comparison with experiments

Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation

Michael O. Thompson, G. J. Galvin, J. W. Mayer et al. · Physical Review Letters · 1984 · 566 citations

Natural Sciences, Materials Engineering, Materials Science +17

A thermal description of the melting of c- and a-silicon under pulsed excimer lasers

S. de Unamuno, É. Fogarassy · Applied Surface Science · 1989 · 200 citations

Engineering, Materials Engineering, Materials Science +14

Macroscopic theory of pulsed-laser annealing. III. Nonequilibrium segregation effects

R. F. Wood · Physical review. B, Condensed matter · 1982 · 85 citations

Engineering, Materials Engineering, Materials Science +17

Ultra-shallow junction formation by excimer laser annealing and low energy (<1 keV) B implantation: A two-dimensional analysis

G. Fortunato, L. Mariucci, M. Stanizzi et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2002 · 41 citations

Engineering, Materials Engineering, Materials Science +14

Transient enhanced diffusion after laser thermal processing of ion implanted silicon

K. S. Jones, Heather Banisaukas, Josh Glassberg et al. · Applied Physics Letters · 1999 · 36 citations

Engineering, Materials Engineering, Materials Science +17