Performance limits of E/D NMOS VLSI

Abstract

This report will discuss an analytic MOST model, including subthreshold and short-channel effects, which accurately describes measured MOST behavior for channel lengths down to 1μm and predicts fundamental limits ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L=0.3μ</tex> m, <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V_{DD}= 0.5</tex> V and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Pt_{d}=0.5</tex> fJ) for optimal E/D inverters.