L.D. Yau - Concepedia

Author

L.D. Yau

University of Illinois Urbana-Champaign

Also Known As

L. D. Yau, L. Yau, L.D. Yau

Publications

Citations

H-Index

Concepts

All Affiliations

University of Illinois Urbana-Champaign Intel (United States)

About

L.D. Yau is an author at University of Illinois Urbana-Champaign specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	18	932
2	Applied Physics	14	15	473
3	Electrical Engineering	10	10	691
4	Chemical Engineering	1	1	42
5	Computer Engineering	1	1	13

L.D. Yau

Publications

942

Citations

H-Index

Page 1

	Year	Citations
A simple theory to predict the threshold voltage of short-channel IGFET's L.D. Yau Solid-State Electronics Device ModelingLow-power ElectronicsElectrical EngineeringShort-channel IgfetEngineering	1974	398
Theory and experiments of low-frequency generation-recombination noise in MOS transistors L.D. Yau, Chih‐Tang Sah IEEE Transactions on Electron Devices Electrical EngineeringSemiconductor DeviceEngineeringRf SemiconductorPhysics	1969	98
Quenched-in centers in silicon p+n junctions L.D. Yau, C. T. Sah Solid-State Electronics EngineeringPhysicsApplied PhysicsCondensed Matter PhysicsSemiconductor Material	1974	72
Measurement of trapped-minority-carrier thermal emission rates from Au, Ag, and Co traps in silicon L.D. Yau, C. T. Sah Applied Physics Letters Wide-bandgap SemiconductorEngineeringSilicon On InsulatorThermal RadiationSemiconductor Device	1972	48
DC Model for short-channel IGFET's H.C. Poon, L.D. Yau, R.L. Johnston, Device ModelingElectrical EngineeringEngineeringElectronic EngineeringDc Model	1973	47
Negative Electron Resists for Direct Device Lithography: II . Poly(Glycidyl Methacrylate‐Co‐3‐Chlorostyrene)—Lithographic Performance L. F. Thompson, L.D. Yau, E. M. Doerries Journal of The Electrochemical Society EngineeringElectron-beam LithographyResist EtchesDirect Device LithographyPlasma Processing	1979	42
Thermal ionization rates and energies of electrons and holes at silver centers in silicon L.D. Yau, C. T. Sah physica status solidi (a) Ion ImplantationEngineeringPhysicsSilicon DebuggingApplied Physics	1971	39
Determination of the Fowler-Nordheim tunneling barrier from nitride to oxide in oxide:nitride dual dielectric L.D. Yau IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringTunneling MicroscopyNitride Dual Dielectric	1986	25
Hot-electron trapping in thin LPCVD SiO<sub>2</sub>dielectrics G.H. Kawamoto, G. Magyar, L.D. Yau IEEE Transactions on Electron Devices Materials ScienceEngineeringElectronic MaterialsLayered StructuresOxide Electronics	1987	20
Thermal emission rates and activation energies of electrons and holes at silver centers in silicon L.D. Yau, C. F. Smiley, C. T. Sah physica status solidi (a) Thermal Emission RatesEngineeringSilicon On InsulatorSemiconductorsElectronic Devices	1972	20

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