GaN-on-patterned-silicon (GPS) technique for fabrication of GaN-based MEMS

Bulk micromachining of silicon

G.T.A. Kovacs, N.I. Maluf, K. Petersen · Proceedings of the IEEE · 1998 · 721 citations

Engineering, Materials Engineering, Materials Science +17

Anisotropic epitaxial lateral growth in GaN selective area epitaxy

D. Kapolnek, S. Keller, R. Vetury et al. · Applied Physics Letters · 1997 · 302 citations

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GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

S. J. Pearton, B. S. Kang, Suku Kim et al. · Journal of Physics Condensed Matter · 2004 · 300 citations

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Room-temperature photoenhanced wet etching of GaN

M. S. Minsky, Mark White, Evelyn L. Hu · Applied Physics Letters · 1996 · 290 citations

Natural Sciences, Materials Engineering, Materials Science +17

Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth

K. Hiramatsu, K. Nishiyama, Atsushi Motogaito et al. · physica status solidi (a) · 1999 · 283 citations

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