Baoshun Zhang

Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

Ronghui Hao, Weiyi Li, Kai Fu et al. · IEEE Electron Device Letters · 2017 · 128 citations

Engineering, Electrical Engineering, Materials Science +17

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si₃N₄as Gate Dielectric and Passivation Layer

Zhili Zhang, Guohao Yu, Xiaodong Zhang et al. · IEEE Transactions on Electron Devices · 2016 · 124 citations

Engineering, Electrical Engineering, Materials Science +17

Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors

Ning Xu, Ronghui Hao, Fu Chen et al. · Applied Physics Letters · 2018 · 116 citations

Engineering, Electrical Engineering, Materials Science +17

Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs

Shenghou Liu, Yong Cai, Guodong Gu et al. · IEEE Electron Device Letters · 2012 · 113 citations

Engineering, Electrical Engineering, Materials Science +17

Integration of LPCVD-SiN<inf>x</inf> gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime

Mengyuan Hua, Zhaofu Zhang, Jin Wei et al. · 2016 · 113 citations

Engineering, Electrical Engineering, Materials Science +17