Japanese Journal of Applied Physics · 2001 · 35 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSurface ScienceEtching ProcessesIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor SurfacesWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsEtch SelectivityEtchingMask SelectivityPhotoresist EtchingSelective EtchingSelectivitySurface EtchingSurface Profile
The selectivity and etched surface profile for etching GaN using an inductively coupled plasma (ICP) in Ni, SiO 2 and photoresist masks were investigated. The mask etching rates in the Ni, SiO 2 and photoresist masks were 26, 70 and 245 nm/min, respectively, for a RF power of 500 W, an ICP power of 600 W and an etching gas ratio of BCl 3 /Ar/ N 2 =15:5:10 (sccm). A high selectivity of 15 in the Ni mask was found to be higher than that of 5.6 and 1.65 in the SiO 2 and photoresist masks, respectively. The best etching surface profile was also obtained in the Ni mask in comparison with the SiO 2 or photoresist mask.
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Reactive ion etching of GaN using BCl3
Mao Lin, Zhaoyan Fan, Zhongqi Ma et al. · Applied Physics Letters · 1994 · 213 citations
High-density plasma etch selectivity for the III–V nitrides
R. J. Shul, C. G. Willison, M. M. Bridges et al. · Solid-State Electronics · 1998 · 42 citations
Natural Sciences, Materials Engineering, Materials Science +13