Concepedia

Mask Selectivity

Mask selectivity is the ratio of the etch rate of the underlying substrate material to the etch rate of the masking material, serving as a critical metric that quantifies the relative resistance of the mask to the etchant compared to the material being etched in semiconductor fabrication processes.

52

Publications

1.6K

Citations

203

Authors

62

Institutions

Publications per year

2017–2026

8

Parents

Publications

52

Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs , Al0.3Ga0.7As , In0.2Ga0.8As , In0.53Ga0.47As , In0.52Al0.48As , and InP

G. DeSalvo, Wen Feng Tseng, J. Comas · Journal of The Electrochemical Society · 1992 · 168 citations

, , +17

Etching characteristics of LiNbO3 in reactive ion etching and inductively coupled plasma

Zhong Ren, P.J. Heard, Jessica Marshall et al. · Journal of Applied Physics · 2008 · 76 citations

, , +14

Mask material effects in cryogenic deep reactive ion etching

Lauri Sainiemi, Sami Franssila · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2007 · 65 citations · Full text

, , +16

Fabrication of Highly Ordered Silicon Nanowire Arrays With Controllable Sidewall Profiles for Achieving Low-Surface Reflection

Yung‐Jr Hung, San‐Liang Lee, B.J. Thibeault et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2010 · 59 citations

, , +17

Deep dry etching of borosilicate glass using fluorine-based high-density plasmas for microelectromechanical system fabrication

Takanori Ichiki, Yoshinari Sugiyama, Takekazu Ujiie et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2003 · 56 citations

, , +13

1–5 of 52

Authors

203

  1. PY
    Pei-yang Yan

    Intel (United States), United States

    3 publications · 60 citations

    3

    h-index

  2. IW
    Ivo W. Rangelow

    Technische Universität Ilmenau, Germany

    2 publications · 47 citations

    2

    h-index

  3. GY
    Geun Young Yeom

    Sungkyunkwan University, South Korea

    2 publications · 72 citations

    2

    h-index

  4. JM
    Jae-Ho Min

    Seoul National University, South Korea

    2 publications · 47 citations

    2

    h-index

  5. JK
    Jong Kyu Kim

    Sungkyunkwan University, South Korea

    2 publications · 72 citations

    2

    h-index

1–5 of 203

Institutions

62

  1. Samsung (South Korea)

    Seoul, South Korea

    4 h-index

    14 publications

    332 citations

  2. Intel (United States)

    Santa Clara, United States

    3 h-index

    10 publications

    151 citations

  3. Sungkyunkwan University

    Seoul, South Korea

    3 h-index

    10 publications

    270 citations

  4. Ajou University

    Suwon, South Korea

    2 h-index

    2 publications

    47 citations

  5. Hitachi (Japan)

    Tokyo, Japan

    2 h-index

    10 publications

    312 citations

  6. Seoul National University

    Seoul, South Korea

    2 h-index

    8 publications

    201 citations

  7. École Polytechnique Fédérale de Lausanne

    Lausanne, Switzerland

    2 h-index

    10 publications

    400 citations

  8. University of Michigan

    Ann Arbor, United States

    2 h-index

    12 publications

    196 citations

1–8 of 62

Venues

  1. 10

    h-index

  2. 8

    h-index

  3. Japanese Journal of Applied Physics

    JJAP · 5 publications · 133 citations

    5

    h-index

  4. Journal of The Electrochemical Society

    JES · 4 publications · 269 citations

    4

    h-index

  5. 4

    h-index

1–5