Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation

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High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

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Dislocation morphology in graded heterojunctions: GaAs1?xPx

M. S. Abrahams, Leonard R. Weisberg, C. J. Buiocchi et al. · Journal of Materials Science · 1969 · 273 citations

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