Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation - Concepedia

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Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation

19

Citations

39

References

2001

Year

Yu. B. Bolkhovityanov, V. I. Mashanov, O. P. Pchelyakov, M. A. Revenko

Thin Solid Films

Materials EngineeringMaterials ScienceEpitaxial GrowthSolid Solutions GesiEngineeringSurface ScienceApplied PhysicsPlastic RelaxationSemiconductor MaterialSemiconductor Device FabricationMolecular Beam EpitaxySilicon On InsulatorLow Temperature Si

References

	Year	Citations

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