M. A. Revenko - Concepedia

Author

M. A. Revenko

Institute of Semiconductor Physics

Also Known As

M A Revenko, M. A. Revenko, M.A Revenko, M.A. Revenko, Mikhail A. Revenko

Publications

216

Citations

H-Index

Concepts

All Affiliations

Institute of Semiconductor Physics

About

M. A. Revenko is an author at Institute of Semiconductor Physics specializing in applied physics, materials science, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	159
2	Applied Physics	9	9	159
3	Materials Science	9	9	159
4	Materials Engineering	7	7	109
5	Physics	2	2	48

M. A. Revenko

Publications

159

Citations

H-Index

Page 1

	Year	Citations
X-ray interference topography investigation of Si/Ge<sub><i>x</i></sub>Si<sub>1 <i>x</i></sub>/Si(001) heterosystem Alexey Fedorov, M. A. Revenko Journal of Physics D Applied Physics Materials ScienceEpitaxial GrowthEngineeringDislocation InteractionPhysics	2003	29
Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film Yu. B. Bolkhovityanov, A. S. Deryabin, M. A. Revenko Applied Physics Letters Materials ScienceInitial StageEngineeringMisfit DislocationsCrystalline Defects	2004	21
Heterostructures GexSi1−x/Si(001) (x=0.18–0.62) grown by molecular beam epitaxy at a low (350 °C) temperature: specific features of plastic relaxation Yu. B. Bolkhovityanov, A. S. Deryabin, M. A. Revenko Thin Solid Films Materials EngineeringSemiconductorsMaterials ScienceEngineeringApplied Physics	2004	19
Plastic relaxation of solid GeSi solutions grown by molecular-beam epitaxy on the low temperature Si(100) buffer layer Yu. B. Bolkhovityanov, V. I. Mashanov, O. P. Pchelyakov, Journal of Applied Physics EngineeringBuffer LayerSilicon On InsulatorNanoelectronicsMolecular Beam Epitaxy	2002	19
Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation Yu. B. Bolkhovityanov, V. I. Mashanov, O. P. Pchelyakov, Thin Solid Films Materials EngineeringMaterials ScienceEpitaxial GrowthSolid Solutions GesiEngineering	2001	19
Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy Yu. B. Bolkhovityanov, A. S. Deryabin, M. A. Revenko Journal of Applied Physics Materials ScienceMaterials EngineeringEpitaxial GrowthEngineeringDislocation Interaction	2004	19
InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source B. R. Semyagin, Yu. B. Bolkhovityanov, A. M. Gilinsky, Journal of Crystal Growth Materials EngineeringMaterials ScienceIngaasp/ingap SuperlatticesEngineeringNanotechnology	2002	12
Heterostructures GexSi1−x/Si(001) grown by low-temperature (300–400°C) molecular beam epitaxy: Misfit dislocation propagation Yu. B. Bolkhovityanov, A. S. Deryabin, M. A. Revenko Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringMisfit Dislocation PropagationApplied Physics	2005	11
Enhanced strain relaxation in a two-step process of GexSi1−x/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy Yu. B. Bolkhovityanov, A. S. Deryabin, M. A. Revenko Applied Physics Letters EngineeringSilicon On InsulatorSemiconductor NanostructuresFirst StepMolecular Beam Epitaxy	2004	10

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