A. S. Deryabin

Determination of the composition and stresses in GexSi(1−x) heterostructures from Raman spectroscopy data: Refinement of model parameters

M. D. Efremov, A. S. Deryabin · Semiconductors · 2006 · 52 citations

Natural Sciences, Materials Science, Physics +14

Mechanisms of edge-dislocation formation in strained films of zinc blende and diamond cubic semiconductors epitaxially grown on (001)-oriented substrates

Yu. B. Bolkhovityanov, A. S. Deryabin · Journal of Applied Physics · 2011 · 25 citations

Natural Sciences, Materials Engineering, Materials Science +17

Mechanism of induced nucleation of misfit dislocations in the Ge-on-Si(0 0 1) system and its role in the formation of the core structure of edge misfit dislocations

Yu. B. Bolkhovityanov, A. S. Deryabin · Acta Materialia · 2012 · 24 citations

Natural Sciences, Materials Engineering, Materials Science +17

Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film

Yu. B. Bolkhovityanov, A. S. Deryabin, M. A. Revenko · Applied Physics Letters · 2004 · 21 citations

Natural Sciences, Materials Engineering, Materials Science +17

Features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x∕Si (x∼0.4–0.5) films caused by Si substrate misorientation from (001)

Yu. B. Bolkhovityanov, A. S. Deryabin · Applied Physics Letters · 2008 · 19 citations

Natural Sciences, Materials Engineering, Materials Science +17