Determination of the composition and stresses in GexSi(1−x) heterostructures from Raman spectroscopy data: Refinement of model parameters

Abstract

Raman spectroscopy is used to monitor the composition and strains of GexSi1−x alloy films with 0.17 ≤ x ≤ 1.0. The composition and strains in the films were also determined from the X-ray diffraction data. Both the position and intensity of the Raman peaks related to vibrations of the Ge-Ge, Ge-Si, and Si-Si bonds were analyzed. This analysis provided substantial refinement of certain model parameters for calculation of the composition and strains in GexSi1−x /Si(100) heterostructures on the basis of Raman spectroscopy data.