Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film

Abstract

The initial stage of relaxation of mechanical stresses in the Ge0.32Si0.68∕Si(001) heterostructure grown by low-temperature (300°C) molecular-beam epitaxy is studied by means of transmission electron microscopy. Dislocation half-loops propagating from the film surface and generating misfit dislocations during expansion are visualized.