Heterostructures GexSi1−x/Si(001) (x=0.18–0.62) grown by molecular beam epitaxy at a low (350 °C) temperature: specific features of plastic relaxation

Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation

D. E. Jesson, Stephen J. Pennycook, J.‐M. Baribeau et al. · Physical Review Letters · 1993 · 257 citations

Natural Sciences, Materials Engineering, Materials Science +17

Novel dislocation structure and surface morphology effects in relaxed Ge/Si-Ge(graded)/Si structures

Srikanth Samavedam, Eugene A. Fitzgerald · Journal of Applied Physics · 1997 · 184 citations

Engineering, Materials Engineering, Materials Science +17

Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

K. K. Linder, F. C. Zhang, Jae-Sung Rieh et al. · Applied Physics Letters · 1997 · 119 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Low-temperature buffer layer for growth of a low-dislocation-density SiGe layer on Si by molecular-beam epitaxy

H. Chen, L.W. Guo, Qi Cui et al. · Journal of Applied Physics · 1996 · 115 citations

Engineering, Materials Engineering, Materials Science +17

Nucleation of misfit dislocations in strained-layer epitaxy in the Ge<i>x</i>Si1−<i>x</i>/Si system

R. Hull, J. C. Bean · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 114 citations

Engineering, Materials Engineering, Materials Science +17