O. P. Pchelyakov

GaAs epitaxy on Si substrates: modern status of research and engineering

Yu. B. Bolkhovityanov, O. P. Pchelyakov · Physics-Uspekhi · 2008 · 242 citations

Engineering, Semiconductor Materials, Optoelectronic Devices +18

Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties

O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. I. Nikiforov et al. · Semiconductors · 2000 · 112 citations

Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots

A. I. Yakimov, Y. Y. Proskuryakov, O. P. Pchelyakov et al. · Applied Physics Letters · 1999 · 106 citations

Engineering, Semiconductor Materials, Optoelectronic Devices +19

Molecular beam epitaxy of silicon–germanium nanostructures

O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. I. Nikiforov et al. · Thin Solid Films · 2000 · 79 citations

Materials Science, Engineering, Nanotechnology +4

Molecular beam epitaxy with synchronization of nucleation

O. P. Pchelyakov, S. I. Stenin, S. Stoyanov · Surface Science · 1991 · 47 citations

Engineering, Physics, Applied Physics +2