Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots

Abstract

Room-temperature infrared photoconductivity in a single layer of Ge self-assembled quantum dots incorporated into silicon p-i-n diode is reported. An in-plane polarized photocurrent response with two bias controlled maxima at 2.9 μm and at 1.7 μm wavelength has been observed. The two kinds of absorption driven by reverse bias in opposite ways are ascribed to the intraband hole bound-to-continuum transition and to the interband excitonic transition.