Concepedia

Heavily Te-Doped GaAs Layers by Plasma-Assisted Epitaxy

Koichi Matsushita, Yoshihiro Sugiyama, Seiji Igarashi, T. Hariu, Yukio Shibata

Japanese Journal of Applied Physics · 1983 · 12 citations · 7 references

DOI

Concepts

Abstract

n-type GaAs layers, which were heavily doped with Te above 2×10 19 cm -3 , were epitaxially grown on (100)GaAs at a substrate temperature around 550°C by plasma-assisted epitaxy. These n + -GaAs layers showed mirror faced surface and their Hall mobilities were about 900 cm 2 /Vsec. These characteristics were not changed by annealing at 550°C for 10 min. The present technology has potential use for the formation of non-alloyed ohmic contacts.

References

7

Nonalloyed Ohmic contacts to <i>n</i>-GaAs by molecular beam epitaxy

P. A. Barnes, A. Y. Cho · Applied Physics Letters · 1978 · 86 citations

, , +14

Nonalloyed Ohmic contacts to <i>n</i>-GaAs by pulse-electron-beam-annealed selenium implants

R. L. Mozzi, Walter M. F. Fabian, F. J. Piekarski · Applied Physics Letters · 1979 · 50 citations

, , +16

Nonalloyed and <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> Ohmic contacts to highly doped <i>n</i>-type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistors

J.V. DiLorenzo, W.C. Niehaus, A. Y. Cho · Journal of Applied Physics · 1979 · 39 citations

, , +17

<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> Ohmic-contact formation to <i>n</i>- and <i>p</i>-GaAs by molecular beam epitaxy

W. T. Tsang · Applied Physics Letters · 1978 · 37 citations

, , +17

Pulsed electron-beam annealing of selenium-implanted gallium arsenide

T. Inada, K. Tokunaga, Shin-ichi Taka · Applied Physics Letters · 1979 · 34 citations

, , +17