Applied Physics Letters · 1979 · 34 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsElectron Beam PhysicsIon ImplantationSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsThermal Properties Of SemiconductorsActivationAnnealingAnnealing EffectsEnergy DensityGallium ArsenidePulsed Electron BeamsThermal AnnealingThermal Annealing Effects
Electrical properties of selenium-implanted gallium arsenide annealed by a single shot of high-power pulsed electron beams have been investigated by differential Hall-effect and sheet-resistivity measurements. It has been shown that higher electrical activation of implanted selenium can be obtained after electron-beam annealing at an incident energy density of 1.2 J/cm2, independent of heating of GaAs substrate during implantation. Measured carrier concentrations exhibit uniformly distributed profiles having carrier concentrations of 2–3×1019/cm3, which is difficult to realize by conventional thermal annealing.
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Laser annealing of boron-implanted silicon
R. T. Young, C. W. White, G. J. Clark et al. · Applied Physics Letters · 1978 · 223 citations
Study of Encapsulants for Annealing GaAs
K. V. Vaidyanathan, M.J. Helix, D. J. Wolford et al. · Journal of The Electrochemical Society · 1977 · 84 citations