<i>p</i>-<i>n</i> junction formation in boron-deposited silicon by laser-induced diffusion

Abstract

A technique for p-n junction formation in silicon, based on deposition of boron on silicon at room temperature followed by laser irradiation is described. Transmission electron microscopy and electrical measurements indicate that as a result of the laser irradiation the boron is dissolved in the silicon and becomes electrically active. Diode characteristics of p-n junctions produced by this technique are quite good. The dopant profile distribution has been obtained using secondary ion mass spectrometry and is in qualitative agreement with simplified theoretical calculations.