Journal of The Electrochemical Society · 1975 · 57 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationOxide SemiconductorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesAnodic OxidationHall EffectHall Effect MeasurementsP-n Junction CharacteristicsSemiconductor CharacterizationSemiconductor Device CharacterizationSemiconductor OxidationThin Oxide Layers
An anodic oxidation process of p‐ and n‐type , using a constant current source, is described. Homogeneous and reproducible oxide layers were obtained using N‐methylacetamide adjusted to a pH value of 8.3 by . For chemically polished and etched surfaces, oxide growth was found to be 20.2 Å/V and the amount of consumed in the oxide was 13.4 Å/V. This technique has been successfully applied to differential sheet resistivity and Hall measurements on ion‐implanted semi‐insulating .