Applied Physics Letters · 1986 · 61 citations · 11 references
EngineeringMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsSemiconductor Thin FilmsConductionConduction BandContact AnnealingContact ResistanceElectrical Contact ResistanceMolecular Beam EpitaxyOhmic ConductionOhmic Contacts
We report preliminary electrical results on n+-InAs/n-GaAs contact structures grown by molecular beam epitaxy. The data indicate that the conduction-band discontinuity is sufficiently small to allow the formation of an ohmic contact to n-type GaAs for very heavily doped InAs layers. The structures require a short-term anneal to obtain a low resistance contact. An InAs layer which is only 200 Å thick is sufficient to provide a specific contact resistance of 10−6 Ω cm2. The contacts appear to be thermally stable for short-term anneals up to 900 °C.
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n-n Semiconductor heterojunctions
W.G. Oldham, A. G. Milnes · Solid-State Electronics · 1963 · 479 citations
Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces
J. M. Woodall, G. D. Pettit, Thomas N. Jackson et al. · Physical Review Letters · 1983 · 134 citations
A GaAs gate heterojunction FET
P. M. Solomon, C. M. Knoedler, Steven L. Wright · IEEE Electron Device Letters · 1984 · 116 citations