H. Baratte

<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> contacts to GaAs based on InAs

S. L. Wright, R. F. Marks, S. Tiwari et al. · Applied Physics Letters · 1986 · 61 citations

Engineering, Materials Science, Physics +17

Annealing behavior of GaAs implanted with Si+ and SiF+ and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap

J. P. de Souza, D. K. Sadana, H. Baratte et al. · Applied Physics Letters · 1990 · 17 citations

Engineering, Materials Science, Physics +17

Outdiffusion of Be during rapid thermal annealing of high-dose Be-implanted GaAs

H. Baratte, D. K. Sadana, J. P. de Souza et al. · Journal of Applied Physics · 1990 · 13 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures

H. Baratte, Thomas N. Jackson, P. M. Solomon et al. · Applied Physics Letters · 1987 · 11 citations

Engineering, Electrical Engineering, Materials Science +17