Journal of Applied Physics · 1990 · 13 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsIon ImplantationRadiation Damage In MaterialsSemiconductor DefectsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesAnnealingAnnealing EffectsAnnealing Temperature EffectsIon Implantation EffectsRapid Thermal AnnealingSurface Layer ProcessesThermal AnnealingThermal Annealing Effects
The outdiffusion of Be implanted into GaAs has been found to be identical after capless or capped (Si3N4 or SiO2 ) rapid thermal annealing (RTA) at 900–1000 °C and to depend on the Be dose and its proximity to the surface. The outdiffusion is more pronounced when the Be implant is shallow (<0.1 μm) and/or the Be+ dose is high (>1×1015 cm−2 ). It is demonstrated that the Be outdiffusion is driven by the presence of a highly damaged surface layer. Auger results suggest the formation of a BeOx compound at the surface of a high-dose (1×1016 cm−2 ) Be-implanted sample that underwent capless RTA at 1000 °C/1 s. It appears that BeOx formation occurs when the outdiffused Be interacts with the native Ga/As oxides during annealing. All the Be remaining in the GaAs after a >900 °C/2 s RTA is electrically active.
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Annealing of Mg implants in GaAs using incoherent radiation
R.T. Blunt, Roy Szweda, M. S. M. Lamb et al. · Electronics Letters · 1984 · 26 citations