M. Norcott

Interfacial Structure of Tungsten Layers Formed by Selective Low Pressure Chemical Vapor Deposition

W. T. Stacy, E. K. Broadbent, M. Norcott · Journal of The Electrochemical Society · 1985 · 58 citations

Materials Science, Surface Technology, Tungsten Layers Formed +12

Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs

Agnese Callegari, D. K. Sadana, D. A. Buchanan et al. · Applied Physics Letters · 1991 · 55 citations

Engineering, Situ Plasma Processing, Silicon On Insulator +16

Formation of TiN/TiSi₂/p⁺-Si/n-Si by rapid thermal annealing (RTA) silicon implanted with boron through titanium

M. Delfino, E. K. Broadbent, A. E. Morgan et al. · IEEE Electron Device Letters · 1985 · 47 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Transmission electron microscopy of aluminum implanted and annealed (100) Si: Direct evidence of aluminum precipitate formation

D. K. Sadana, M. Norcott, R. G. Wilson et al. · Applied Physics Letters · 1986 · 44 citations

Engineering, Al Particles, Chemical Deposition +16

Thermally stable ohmic contacts to <i>n</i>-type GaAs. VII. Addition of Ge or Si to NiInW ohmic contacts

Masanori Murakami, W. H. Price, M. Norcott et al. · Journal of Applied Physics · 1990 · 19 citations

Engineering, Annealing Step, Ge Addition +17