Correlation of Hot-Carrier and Radiation Effects in MOS Transistors

J. D. McBrayer, Daniel M. Fleetwood, R. A. Pastorek, R. V. Jones

IEEE Transactions on Nuclear Science · 1985 · 31 citations · 7 references

Concepts

Abstract

The effects of processing variations on the hot-carrier susceptibility of radiation-hardened CMOS transistors have been examined. It has been determined that many process variations which enhance radiation hardness also reduce hot-carrier-induced device degradation. The interactions of radiation and hot-carrier effects are demonstrated not to be additive.

References

7